TTC015B,Q

Single Bipolar Transistors Overview

The TTC015B is a silicon NPN epitaxial type bipolar transistor manufactured by Toshiba Semiconductor and Storage. It is housed in a TO-126N surface-mount package with three terminals: emitter, collector, and base. The device supports a collector-emitter voltage of 80 V and a continuous collector current of 0.5 A. It features a high DC current gain ranging from 100 to 200 at 0.5 A. The component exhibits low saturation voltage and fast switching characteristics, including a typical storage time of 400 ns. It operates within a junction temperature range of -55 °C to 150 °C.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching speed suitable for high-frequency applications
• Complementary pairing available with the TTA008B PNP transistor

Single Bipolar Transistors Applications

• Power Amplifiers
• Power Switching circuits

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance details are not explicitly confirmed in the provided datasheet text. Ensure design reliability by consulting the Toshiba Semiconductor Reliability Handbook regarding derating concepts and handling precautions under heavy loads or extreme temperatures.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN transistor with moderate voltage ratings and high current gain. Consider the complementary TTA008B for push-pull configurations. Evaluate thermal management requirements against the 0.5 W dissipation rating and ensure the operating junction temperature remains within the specified limits during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the Bipolar Transistors category, specifically Silicon NPN Epitaxial Types. Commercial production started in August 2013. The device is designed for general-purpose power applications where compact packaging and reliable switching performance are required. It utilizes a TO-126N package form factor.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the TTA008B as the complementary PNP counterpart. No other direct substitute part numbers are listed in the provided documentation.

Single Bipolar Transistors FAQ

Is the TTC015B isolated from surrounding parts?

No. Although encapsulated in epoxy resin, the device does not guarantee maximum isolation voltage. Care must be taken regarding electrical isolation from surrounding components.

What is the maximum collector-base voltage?

The absolute maximum rating for collector-base voltage (VCBO) is 160 V.

Can this transistor drive 50 Ω transmission lines?

No. That capability is associated with the TC74ACT151P multiplexer mentioned in unrelated search results. The TTC015B is a bipolar transistor with different specifications.