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UG8JCT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 600V 4A TO-220-3. Review the specifications below when checking this part for your BOM.
The Vishay UG8JCT-E3/45 is a dual common-cathode ultrafast plastic rectifier featuring a 600 V maximum repetitive peak reverse voltage and an 8.0 A average forward rectified current rating. It utilizes glass passivated chip junctions to achieve a typical reverse recovery time of 25 ns with soft recovery characteristics, minimizing switching losses. The component operates within a junction temperature range of -55 °C to +150 °C and provides high forward surge capability up to 65 A.
Verify the specific package variant (TO-220AB, ITO-220AB, or TO-263AB) required for your design, as the base part number covers multiple mechanical configurations. Confirm RoHS compliance status and ensure the supplier provides the official datasheet revision 09-Nov-07 for accurate electrical parameter validation before finalizing procurement.
Select this component when designing circuits requiring fast switching speeds and low reverse recovery charge in dual common-cathode configurations. Ensure the thermal management strategy accounts for the specified thermal resistance from junction to case. Verify that the operating voltage does not exceed the 600 V maximum repetitive peak reverse voltage rating under all transient conditions.
This device belongs to the UG(F,B)8HCT & UG(F,B)8JCT series manufactured by Vishay General Semiconductor - Diodes Division. It is designed as a dual common-cathode rectifier suitable for through-hole mounting applications. The product line emphasizes efficiency in high-frequency power conversion environments.
UG8HCT-E3/45
The typical reverse recovery time is 25 ns.
Yes, the datasheet specifies soft recovery characteristics with a typical softness factor of 0.9.
The maximum peak forward surge current is 65 A for an 8.3 ms single half sine-wave superimposed on rated load per diode.
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