Single Diodes UJ3D06508TS product image

UJ3D06508TS

$3.29
  • Description:DIODE SIL CARB 650V 8A TO220-2
  • Series:Gen-III
  • Mfr:onsemi
  • Package:Tube

SKU:dc86e44c00b0 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

UJ3D06508TS is listed in the Single Diodes range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SIL CARB 650V 8A TO220-2. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for UJ3D06508TS

  • Description:DIODE SIL CARB 650V 8A TO220-2
  • Series:Gen-III
  • Mfr:onsemi
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):8A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 650 V
  • Capacitance @ Vr, F:250pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for UJ3D06508TS

UJ3D06508TS

Single Diodes Overview

The UJ3D06508TS is a silicon carbide (SiC) merged PIN Schottky diode manufactured by onsemi. It features a 650 V repetitive reverse voltage rating and an 8 A forward current capability in a TO-220-2 through-hole package. Key electrical parameters include a maximum forward voltage of 1.5 V, a peak forward surge current of 70 A, and a reverse leakage current of 80 uA. The device supports a power dissipation of 187.5 W and operates within a temperature range of -55 C to +175 C. It holds AEC-Q101 qualification.

Single Diodes Feature Summary

  • Merged PIN Schottky technology for low forward voltage drop
  • Extremely fast switching characteristics independent of temperature
  • Easy paralleling capability for high-current applications

Single Diodes Applications

  • High-frequency power conversion circuits
  • Automotive power electronics systems
  • Industrial motor drives and inverters

Single Diodes Procurement Notes

Verify the specific suffix 'TS' corresponds to the tube packaging format required for your assembly line. Confirm that the component status reflects current availability as discontinuation notices may apply. Ensure thermal management designs account for the specified 187.5 W power dissipation limit under actual operating conditions rather than theoretical maximums.

Single Diodes Selection Notes

Select this component when a low-loss, high-speed rectifier is needed in a through-hole package. The SiC material enables superior performance compared to silicon alternatives at high temperatures. Consider the 650 V rating for compatibility with standard bus voltages. Evaluate thermal resistance requirements based on the TO-220-2 footprint and mounting constraints.

Single Diodes Part Context

This part belongs to the UJ3D series of silicon carbide Schottky diodes from onsemi. The series is designed for high-efficiency power applications requiring robust performance. The UJ3D06508TS specifically targets the 8 A current class within the 650 V voltage family, offering a balance between conduction loss and switching speed.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal specifications if considering alternative manufacturers. Check for equivalent AEC-Q101 qualification if automotive reliability is required.

UJ3D06508TSUJ3D06508TS
$3.29
Buy Now

Recent News