UM7512CR

RF Diode Overview

The UM7512CR is a high-power PIN diode from the UM7500 series, manufactured by Microchip Technology. It features a hermetic fused-in-glass construction with a metallurgically bonded design for reliable performance in RF and microwave applications. The device offers a reverse voltage rating of 1200V at 0.5 µA leakage current. Key electrical parameters include a total capacitance of 1.0 pF maximum at 100V and 1 MHz, and a series resistance of 1.0 Ohm maximum at 50 mA forward current and 100 MHz. The component supports an operating temperature range from -65°C to +175°C and is designed for use in switch and attenuator circuits.

RF Diode Feature Summary

• Hermetically sealed fused-in-glass construction ensures voidless, particle-free reliability.
• Metallurgically bonded and thermally matched design optimizes power dissipation capabilities.
• Low leakage distortion achieved through controlled I-region thickness and high carrier lifetime.
• Capable of meeting MIL-STD-750 requirements including HTRB screening for military applications.

RF Diode Applications

• RF and microwave switch circuits
• Attenuator circuits
• High-end medical equipment such as MRI and CAT scan systems

RF Diode Procurement Notes

Verify the specific package style associated with the CR suffix against official documentation before procurement. Confirm that the ordering information aligns with current manufacturer specifications. Ensure compliance with relevant environmental standards if required for the intended deployment environment.

RF Diode Selection Notes

Select this component when a high reverse voltage rating of 1200V is required for RF switching or attenuation. Consider the hermetic package for environments demanding high reliability and thermal stability. Evaluate the thermal impedance characteristics to ensure adequate heat dissipation within the system constraints.

RF Diode Part Context

The UM7512CR belongs to the UM7500 series of power PIN diodes produced by Microsemi, now part of Microchip Technology. This series utilizes advanced silicon wafer bonding and junction passivation techniques to deliver stable reverse characteristics and low leakage currents suitable for demanding RF applications.

RF Diode Replacement Considerations

Consult the official datasheet for direct replacement options. Verify compatibility regarding voltage ratings, package dimensions, and thermal performance before substituting with other components in the UM7500 series or alternative manufacturers.