UPC3245TB-E3-A

RF Amplifiers Overview

The UPC3245TB-E3-A is a SiGe BiCMOS wideband amplifier IC designed for operation across a frequency range of 250MHz to 3GHz. It features a 3-step gain selection function and operates on a low voltage supply of 3.0V to 3.6V, typically 3.3V. The device provides a typical power gain of 20.5dB in high-gain mode at 1.0GHz. It is housed in a 6-Minimold surface-mount package and draws a supply current of 27.5mA.

RF Amplifiers Feature Summary

• SiGe BiCMOS integrated circuit technology for wideband amplification
• Three-step selectable gain configuration for flexible system integration
• Low voltage operation capability centered around 3.3V supply

RF Amplifiers Applications

• Direct Broadcast Satellite (DBS) signal processing
• Wideband RF front-end amplification stages
• Communication systems requiring broad frequency coverage

RF Amplifiers Procurement Notes

Verify component authenticity through authorized distributors or official Renesas channels. Confirm RoHS compliance status as indicated by the E3 suffix. Check product lifecycle status, as this specific part number may be classified as obsolete. Ensure the 6-Minimold package dimensions match your PCB footprint requirements before procurement.

RF Amplifiers Selection Notes

Select this component when a wideband SiGe amplifier with configurable gain steps is required for 3.3V systems. Consider the 250MHz to 3GHz operational range against your specific frequency needs. Evaluate the 20.5dB typical gain performance relative to your link budget. Verify that the surface-mount 6-Minimold package suits your assembly capabilities.

RF Amplifiers Part Context

This part belongs to Renesas' portfolio of SiGe BiCMOS integrated circuits. It serves as a wideband amplifier solution within the analog and mixed-signal category. The UPC3245TB series provides robust RF amplification for applications demanding broad frequency response and low voltage operation.

RF Amplifiers Replacement Considerations

Consult official Renesas documentation for qualified replacement parts. Verify pin compatibility and electrical specifications if substituting with other wideband amplifiers. Ensure any alternative maintains the required 3-step gain functionality and SiGe BiCMOS process characteristics.