VBT3045C-E3/8W

Diode Arrays Overview

The VBT3045C-E3/8W is a dual low-voltage Trench MOS Barrier Schottky rectifier in a D2PAK (TO-263AB) package. It features a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 30 A, with 15 A per diode. The device exhibits an ultra-low forward voltage drop of 0.30 V at 5.0 A and 0.39 V at 15 A. It supports a peak forward surge current of 200 A and operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for high efficiency operation
• Ultra-low forward voltage drop reducing power losses
• Common cathode configuration for dual-channel applications

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /8W to confirm tape and reel packaging containing 800 units per reel. Confirm RoHS compliance via the E3 suffix and ensure the component meets MSL level 1 requirements. Validate that the thermal resistance and current derating curves align with the target application's heat dissipation capabilities before finalizing procurement.

Diode Arrays Selection Notes

Select this component for designs requiring low conduction losses at moderate voltages. The common cathode arrangement simplifies circuit topology for dual-rail or synchronous rectification needs. Ensure the PCB layout accommodates the D2PAK footprint and provides adequate copper area for thermal management to maintain junction temperatures within the specified 150 °C limit under full load conditions.

Diode Arrays Part Context

This part belongs to Vishay's VBT series of dual low-voltage Schottky rectifiers. It utilizes TMBS technology to combine the fast switching characteristics of Schottky diodes with the robustness of MOS structures. The D2PAK package allows for efficient surface-mount mounting while providing a thermal path through the exposed pad for effective heat transfer.

Diode Arrays Replacement Considerations

VBT3045C-E3/4W

Diode Arrays FAQ

What is the typical thermal resistance from junction to case?

The typical thermal resistance is 1.6 °C/W per diode and 0.85 °C/W per device.

Does the component meet moisture sensitivity level 1?

Yes, it meets MSL level 1 per J-STD-020 with a maximum peak reflow temperature of 245 °C.

What is the maximum instantaneous forward voltage at 15 A?

The maximum instantaneous forward voltage is 0.57 V at 15 A and 25 °C.