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VO206AT is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 4KV TRANS W/BASE 8-SOIC. Review the specifications below when checking this part for your BOM.
The VO206AT is a single-channel transistor output optocoupler featuring a GaAs infrared LED and an NPN silicon phototransistor. It provides 4000 Vrms isolation voltage in an 8-SOIC package. Key electrical parameters include a minimum current transfer ratio of 63% at 10 mA, with a maximum of 125%. The device supports a maximum collector-emitter voltage of 70 V and a collector current of 50 mA. Typical switching times are 3 µs rise and 2 µs fall. The forward voltage is typically 1.5 V, and the collector-emitter saturation voltage is 400 mV max.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in product documentation. Ensure the 8-SOIC package dimensions match design requirements. Validate that the specific suffix corresponds to the intended tape and reel or cut tape packaging configuration for automated assembly processes.
Select this component when high-speed switching is required alongside standard isolation levels. The integrated base allows for faster turn-off times compared to baseless variants. Ensure the input current does not exceed 60 mA limits. Verify that the 70 V output voltage rating accommodates the load requirements. Consider the 8-SOIC footprint for PCB layout compatibility.
This part belongs to Vishay's family of transistor output optocouplers, which includes similar models like VO205AT, VO207AT, and VO208AT. These devices share common architectural features such as the GaAs LED and silicon phototransistor combination. The series is designed for general-purpose isolation applications where reliability and moderate speed are prioritized over extreme voltage ratings.
The typical rise time is 3 µs and the typical fall time is 2 µs.
Yes, it features an NPN phototransistor with an integrated base connection to improve switching characteristics.
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