VP0808B-E3

Single FETs, MOSFETs Overview

The VP0808B-E3 is a P-channel enhancement-mode MOSFET transistor manufactured by Vishay Siliconix. It features an 80V drain-source breakdown voltage and a maximum on-resistance of 5 ohms at VGS = -10V. The device supports a continuous drain current of -0.88A and a pulsed drain current of -3A. Power dissipation reaches 6.25W in the TO-205AD package. Key electrical parameters include a gate threshold voltage range of -2V to -4.5V, input capacitance of 75pF, and switching times of approximately 40ns.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement-mode architecture for high-side switching applications
• Low on-resistance with moderate gate threshold voltage for ease of driving
• Fast switching speed combined with low input capacitance
• Low offset voltage suitable for low-voltage operation

Single FETs, MOSFETs Applications

• High-speed switching circuits
• Battery-operated systems
• Power supply and converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to discontinuance or limited availability. Confirm RoHS compliance status and specific ordering suffixes against official manufacturer documentation prior to procurement. Ensure storage conditions meet specified temperature ranges to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select the VP0808B-E3 when designing circuits requiring P-channel high-side switching with moderate current capabilities. Consider the 5-ohm on-resistance limit for power loss calculations. Verify that the required gate drive voltage aligns with the -2V to -4.5V threshold range for reliable turn-on characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the VP0808B/L/M series of silicon N- and P-channel enhancement-mode field effect transistors. Manufactured using planar trench technology, these devices are designed for general-purpose switching applications. The VP0808B variant specifically offers higher current handling compared to the L and M subtypes within the same voltage rating family.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for cross-reference data. Potential substitutes include other Vishay Siliconix P-channel MOSFETs with matching 80V ratings and comparable on-resistance specifications.