Single Diodes VS-3C04ET07T-M3 product image

VS-3C04ET07T-M3

$2.69
  • Description:DIODE SIL CARB 650V 4A TO220AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube

SKU:75482e742b87 Category: Brand:

  
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VS-3C04ET07T-M3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SIL CARB 650V 4A TO220AC. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for VS-3C04ET07T-M3

  • Description:DIODE SIL CARB 650V 4A TO220AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):4A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 4 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 650 V
  • Capacitance @ Vr, F:175pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220AC
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for VS-3C04ET07T-M3

VS-3C04ET07T-M3

Single Diodes Overview

The VS-3C04ET07T-M3 is a Generation 3 Silicon Carbide (SiC) Schottky diode rated for 650 V and 4 A. It utilizes a merged PIN Schottky structure on wide band gap material to achieve improved forward voltage and efficiency. The device features a positive temperature coefficient for VF, enabling easy paralleling without current sharing issues. It exhibits virtually no recovery tail and negligible switching losses, making it suitable for high-speed hard switching applications.

Single Diodes Feature Summary

  • MPS structure provides high ruggedness against forward current surge events
  • Temperature invariant switching behavior with virtually zero reverse recovery time
  • Positive VF temperature coefficient facilitates parallel operation

Single Diodes Applications

  • AC/DC Power Factor Correction (PFC)
  • DC/DC ultra-high frequency output rectification in FBPS converters
  • LLC resonant converter topologies

Single Diodes Procurement Notes

Verify the specific ordering suffix matches the required package and environmental compliance. Confirm that the TO-220AC 2L mounting torque does not exceed 10 in-lbs during assembly. Validate thermal management requirements against the junction-to-case thermal resistance specifications provided in the datasheet.

Single Diodes Selection Notes

Select this component when designing circuits requiring low switching losses and high-temperature operation up to 175 °C. The positive temperature coefficient of the forward voltage drop simplifies thermal management in parallel configurations compared to standard silicon diodes.

Single Diodes Part Context

This part belongs to Vishay's Gen 3 SiC Schottky Diode family. It shares the same 650 V rating and TO-220AC 2L package as higher current variants like the VS-3C10EV07T-M3/I, but offers lower continuous forward current capability suited for compact power stages.

Single Diodes Replacement Considerations

Direct substitutes within the same Vishay generation include other 650 V SiC Schottky diodes in the TO-220AC 2L package, such as the VS-3C08EV07T-M3/I or VS-3C10EV07T-M3/I, provided the application current requirements are met.

VS-3C04ET07T-M3VS-3C04ET07T-M3
$2.69
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