VS-3EGH06-M3/5BT

Single Diodes Overview

The VS-3EGH06-M3/5BT is a hyperfast recovery rectifier manufactured by Vishay Semiconductors. It features a single diode configuration in an SMB (DO-214AA) surface-mount package. The device supports a maximum repetitive reverse voltage of 600 V and an average forward current of 3 A at 90 °C case temperature. Key electrical characteristics include a typical forward voltage drop of 1.2 V at 3 A and 150 °C, and a typical reverse recovery time of 35 ns under standard test conditions. The component operates within a junction temperature range of -55 °C to +175 °C.

Single Diodes Feature Summary

• Hyperfast recovery time with reduced stored charge and soft recovery characteristics
• Platinum-doped lifetime control for optimized performance and ruggedness
• Low forward voltage drop and low leakage current
• Compliant with RoHS standards and halogen-free

Single Diodes Applications

• Power Factor Correction (PFC) Boost stages in AC/DC sections of Switched-Mode Power Supplies (SMPS)
• Inverter circuits
• Freewheeling diode applications

Single Diodes Procurement Notes

Verify the specific ordering suffix /5BT corresponds to the 13-inch diameter plastic tape and reel packaging format containing 3200 units per tube as defined in the official Vishay ordering information table. Confirm that the M3 designation indicates the component is halogen-free, RoHS-compliant, and totally lead-free before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component for high-frequency switching applications requiring fast recovery times and low reverse recovery charge. Ensure the design accommodates the thermal resistance requirements, specifically the junction-to-mount and junction-to-ambient values provided in the datasheet. Validate the peak surge current capability against potential transient loads in the target circuit environment.

Single Diodes Part Context

This part belongs to the Vishay FRED Pt® series of hyperfast rectifiers. It utilizes planar structure technology and platinum-doped lifetime control to ensure reliability. The device is designed to minimize switching losses and reduce power dissipation in both the switching element and snubbers during operation.

Single Diodes Replacement Considerations

VS-3EGH06-M3/H

Single Diodes FAQ

What is the typical reverse recovery time for this device?

The typical reverse recovery time is 35 ns when tested at TJ = 25 °C with IF = 1.0 A, dIF/dt = 100 A/μs, and VR = 30 V.

Is this component suitable for automotive applications?

The provided datasheet does not specify automotive qualification or AEC-Q101 certification for this specific part number.