Memory IC W63AH2NBVADI TR product image

W63AH2NBVADI TR

$3.06
  • Description:IC DRAM 1GBIT HSUL 12 178VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)

SKU:2ad8d1967e71 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

W63AH2NBVADI TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Winbond Electronics. Its product description is IC DRAM 1GBIT HSUL 12 178VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for W63AH2NBVADI TR

  • Description:IC DRAM 1GBIT HSUL 12 178VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR3
  • Memory Size:1Gbit
  • Memory Organization:32M x 32
  • Memory Interface:HSUL_12
  • Clock Frequency:1.066 GHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature:-40°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:178-VFBGA
  • Supplier Device Package:178-VFBGA (11x11.5)
  • Access Time:5.5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for W63AH2NBVADI TR

W63AH2NBVADI TR

Memory IC Overview

The Winbond W63AH2NBVADI TR is a 1 Gbit LPDDR3 SDRAM device featuring a 32-bit data bus width and an organization of 32 M x 32. It supports a maximum clock frequency of 1066 MHz and operates within an industrial temperature range of -40°C to +85°C. The component utilizes a VFBGA-178 package with surface mount installation. Power supply requirements include a minimum voltage of 1.14 V and a maximum of 1.95 V, with a maximum power current of 39 mA.

Memory IC Feature Summary

  • Supports double data rate architecture on the Command/Address bus for reduced pin count
  • Configured as an 8-bank memory structure
  • Includes Partial Array Self-Refresh capability for power management

Memory IC Applications

  • Mobile electronic devices requiring high-speed volatile memory
  • Industrial embedded systems operating in extreme temperatures
  • Consumer electronics utilizing LPDDR3 interface standards

Memory IC Procurement Notes

Verify the specific ordering suffix 'TR' indicates tape and reel packaging configuration. Confirm that the 'I' designation corresponds to the specified industrial temperature range during final procurement validation. Ensure compatibility with the required VFBGA-178 footprint and soldering profiles before integration.

Memory IC Selection Notes

Select this component when a 1 Gbit capacity with a 32-bit interface is required for mobile or industrial applications. Consider the 1066 MHz speed grade for high-bandwidth needs. Verify that the system design accommodates the 1.7 V to 1.95 V VDD1 supply range and the specific thermal constraints of the industrial grade variant.

Memory IC Part Context

This part belongs to the W63AH2NB series of LPDDR3 SDRAMs manufactured by Winbond Electronics. It shares architectural similarities with other members of the family but is distinguished by its specific speed grade, temperature rating, and packaging format. The device is designed to meet JEDEC standards for low-power mobile memory interfaces.

Memory IC Replacement Considerations

W63AH2NBVACE

Memory IC FAQ

What is the internal bank configuration of the W63AH2NBVADI TR?

The device is internally configured as an 8-bank memory structure.

How does the Command/Address bus operate in this LPDDR3 device?

It uses a double data rate architecture where command information is transferred on both the positive and negative edges of the clock cycle.

W63AH2NBVADI TRW63AH2NBVADI TR
$3.06
Buy Now

Recent News