XP3P3R0MT

Single FETs, MOSFETs Overview

The XP3P3R0MT is a single-channel P-Channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features a 30V drain-source breakdown voltage and supports a continuous drain current of -33.5A. The device exhibits a low on-resistance of 3 milliohms with a gate-source voltage rating of ±20V. Key switching parameters include a gate charge of 76nC, a rise time of 12ns, and a fall time of 74ns. It operates within a temperature range of -55°C to +150°C, dissipates up to 5W of power, and is housed in a PMPAK-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

• High-current capability with a continuous drain current rating of -33.5A for robust load handling
• Ultra-low on-resistance of 3 milliohms to minimize conduction losses and improve efficiency
• Enhanced thermal performance supporting a maximum junction temperature of +150°C
• Surface-mount construction in a compact PMPAK-8 package for automated assembly

Single FETs, MOSFETs Applications

• DC-DC converter output stages requiring high current handling
• Low-side or high-side power switching in industrial control systems
• Motor driver circuits utilizing P-channel topology
• Power management modules in computing infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides valid traceability documentation. Confirm that the component meets RoHS directives as specified in the technical data. Cross-reference the package marking with the official identification guide to prevent counterfeit substitution during quality inspection.

Single FETs, MOSFETs Selection Notes

Select this component when circuit design demands high continuous current capacity alongside minimal voltage drop across the switch. The low on-resistance makes it suitable for applications prioritizing thermal efficiency under heavy loads. Verify that the gate drive voltage aligns with the ±20V specification to ensure full enhancement without exceeding absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSemi, designed for general-purpose power switching. The series utilizes advanced silicon planar technology to achieve high density and reliability. The PMPAK-8 package variant offers improved thermal dissipation compared to standard small-signal packages, supporting higher power densities in compact footprints.

Single FETs, MOSFETs Replacement Considerations

Consult the official YAGEO XSemi cross-reference list for verified substitutes. Ensure any replacement maintains identical pin configuration, voltage ratings, and thermal characteristics to avoid redesigning the PCB layout or gate drive circuitry.