ZTX657STOA

Single Bipolar Transistors Overview

The ZTX657STOA is an NPN silicon planar medium power high voltage transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 300 V and supports a continuous collector current of 0.5 A with a maximum power dissipation of 1 W at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +200°C. Key electrical characteristics include a transition frequency of 30 MHz, a static forward current transfer ratio (hFE) minimum of 40 at 10 mA, and a collector-emitter saturation voltage of 0.5 V at 100 mA.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300 V collector-emitter breakdown rating
• Robust thermal performance supporting operation up to 200°C junction temperature
• Medium power handling with 1 W dissipation capacity in E-Line package

Single Bipolar Transistors Applications

• High voltage switching circuits
• Linear regulator output stages
• Power supply control loops

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet for the ZTX657STOA to confirm current availability status and exact pinout configuration. Ensure that the procurement source provides authentic components matching the Diodes Incorporated specifications. Cross-reference the part number against official distributor catalogs to validate authenticity before purchase.

Single Bipolar Transistors Selection Notes

Select this component when a high voltage NPN transistor with moderate current handling is required. The 300 V rating distinguishes it from lower voltage alternatives like the ZTX656. Consider the E-Line package compatibility for through-hole mounting requirements. Evaluate the thermal management needs given the 1 W power dissipation limit.

Single Bipolar Transistors Part Context

This transistor belongs to the ZTX65x series of high voltage NPN silicon planar transistors designed for medium power applications. The series includes variants such as the ZTX656 and ZTX657, differentiated primarily by their voltage ratings. These devices are engineered for reliability in demanding electronic environments requiring robust high-voltage performance.

Single Bipolar Transistors Replacement Considerations

The ZTX656 serves as a direct substitute where a 200 V rating suffices instead of 300 V. Verify that the replacement meets the same current and power dissipation requirements. Ensure the pinout remains compatible with the existing circuit design.