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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIRGP4640 - DISCRETE IGBT WITH ANBulk--*-
Infineon TechnologiesIGBT 600V 65A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 65A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 76A TO-247ADBulk,TubeTO-247ADThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 76A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 100A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 100A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 140A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 175°C (TJ)
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