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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 650V 140A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V TO247 COPAKTube----
Infineon TechnologiesIGBT 600V TO247 COPAKTube----
International RectifierIGBT 600V 32A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 175°C (TJ)
International RectifierIGBT 600V 32A TO-247ACTubeTO-247ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 47A TO-247ADTube,TubeTO-247ADThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 47A TO-247ACTubeTO-247ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 65A TO-247ADTube,TubeTO-247ADThrough Hole--40°C ~ 175°C (TJ)
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