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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT NPT 600V 27A TO-220FIBagTO-220FI(LS)Through Hole--
WeEn SemiconductorsIGBT TRENCH FS 650V 91A TO-247-3BulkTO-247-3Through Hole--55°C ~ 150°C (TJ)
WeEn SemiconductorsIGBT TRENCH FS 650V 91A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Littelfuse Inc.IGBT N-CH 20A 350V D2PAKTape & Reel (TR)--*-
Littelfuse Inc.IGBT N-CH 20A 350V D2PAKTape & Reel (TR)--*-
Littelfuse Inc.IGBT N-CH 20A D2PAKTape & Reel (TR)--*-
Littelfuse Inc.IGBT N-CH 20A D2PAKTube--*-
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