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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT TRENCH FS 600V 120A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 120A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 80A MAX247TubeMAX247™Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 110A MAX247TubeMAX247™Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 120A MAX247TubeMAX247™Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT NPT FS 650V 160A MAX247TubeMAX247™Through HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 160A MAX247TubeMAX247™Through HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 100A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
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