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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGWT30V60DF $3.80 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT30V60F $3.80 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT38IH130D $4.81 | STMicroelectronics | IGBT 1300V 63A TO-3P | Tube | TO-3P | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGWT40H60DLFB $4.39 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT40H65DFB $4.04 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT40H65FB $4.39 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT40HP65FB $3.01 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-3P | Tube | TO-3P | Through Hole | HB | -55°C ~ 175°C (TJ) |
![]() STGWT40V60DF $4.60 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |

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