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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT TRENCH FS 650V 119A TO247TubeTO-247 Long LeadsThrough HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 130A TO247TubeTO-247 Long LeadsThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 80A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 80A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 115A TO247TubeTO-247 Long LeadsThrough HoleHB2-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 120A TO247TubeTO-247 Long LeadsThrough HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 120A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
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