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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGWA80H65DFBAG $5.96 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO247 | Tube | TO-247 Long Leads | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWA80H65FB $2.24 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO247 | Tube | TO-247 Long Leads | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWA8M120DF3 $3.70 | STMicroelectronics | IGBT TRENCH FS 1200V 16A TO247 | Tube | TO-247 Long Leads | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGWF30NC60S $1.75 | STMicroelectronics | IGBT 600V 35A 79W TO3P | Tube | TO-3P | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGWS38IH130D $1.74 | STMicroelectronics | IGBT 1300V 55A TO-247 | Tube | TO-247 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGWT15H60F $0.81 | STMicroelectronics | IGBT TRENCH FS 600V 30A TO-3P | Tube | TO-3P | Through Hole | H | -55°C ~ 175°C (TJ) |
![]() STGWT20H60DF $1.15 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT20H65FB $2.93 | STMicroelectronics | IGBT TRENCH FS 650V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |

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