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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT TRENCH FS 600V 80A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 80A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FIELD STOP 600V 80ATube-Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT BIPO 600V 60A TO3PTube----
STMicroelectronicsIGBT TRENCH FS 650V 120A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 120A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
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