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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGWT40V60DLF $4.44 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT60H60DLFB $2.24 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT60H65DFB $4.30 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT60H65FB $4.41 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT60V60DF $2.03 | STMicroelectronics | IGBT TRENCH FIELD STOP 600V 80A | Tube | - | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT60V60DLF $2.30 | STMicroelectronics | IGBT BIPO 600V 60A TO3P | Tube | - | - | - | - |
![]() STGWT80H65DFB $6.38 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT80H65FB $5.87 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |

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