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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT MODULE SIXPACK E3-PACK-PF | Box | - | - | - | - | |
| IXYS | IGBT MODULE 1200V 120A 390W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 120A 390W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 120A 390W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 120A 390W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 120A 390W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT MODULE - SIXPACK E3-PACK-PF | Box | - | - | - | - | |
| IXYS | IGBT MODULE - SIXPACK E3-PACK-PF | Box | E3 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
