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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | MODULE IGBT ECONO SWITCH | Tray | - | - | - | - | |
| Vishay General Semiconductor - Diodes Division | MODULE IGBT SIP SWITCH | Tray | - | - | - | - | |
| Vishay General Semiconductor - Diodes Division | MOSFET MODULE SIP SWITCH | Tray | - | - | - | - | |
| IXYS | IGBT MOD 600V 31A 100W ECO-PAC2 | Box | ECO-PAC2 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 VWI6-12P1 $20.91 | IXYS | IGBT MOD 1200V 6A 40W ECO-PAC2 | Box | ECO-PAC2 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 WG50N65DHJQ $1.38 | WeEn Semiconductors | IGBT TRENCH FS 650V 91A TO-247-3 | Bulk | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
 WG50N65DHWQ $3.89 | WeEn Semiconductors | IGBT TRENCH FS 650V 91A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT MODULE | Bulk | - | - | - | - |
