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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 2PS18012E44G38553NOSA1 $4,235.28 | Infineon Technologies | IGBT MOD 1200V 2560A 5600W | Tray | Module | Chassis Mount | PrimeSTACK™ | 150°C (TJ) |
2PS18012E44G40113NOSA1 $4,235.28 | Infineon Technologies | IGBT MOD 1200V 2560A 5600W | Tray | Module | Chassis Mount | PrimeSTACK™ | -25°C ~ 60°C |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 100A 445W 10MTP | - | 10-MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 114A 658W 12MTP | - | 12-MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 650V COPAK | Tube | - | - | * | - | |
| Infineon Technologies | IGBT CHIP | Bulk | - | - | - | - | |
| Infineon Technologies | IGBT CHIP | Bulk | - | - | - | - | |
| Infineon Technologies | IGBT CHIP | Bulk | - | - | - | - |
