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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() A1C15S12M3 $41.65 | STMicroelectronics | IGBT MOD 1200V 15A ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1C15S12M3-F $42.39 | STMicroelectronics | IGBT MOD 1200V 15A ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P25S12M3 $27.39 | STMicroelectronics | IGBT MOD 1200V 25A 197W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P25S12M3-F $40.03 | STMicroelectronics | IGBT MOD 1200V 25A 197W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P35S12M3 $43.85 | STMicroelectronics | IGBT MOD 1200V 35A 250W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P35S12M3-F $44.86 | STMicroelectronics | IGBT MOD 1200V 35A 250W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P50S65M2 $40.03 | STMicroelectronics | IGBT MOD 650V 50A 208W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() A1P50S65M2-F $28.80 | STMicroelectronics | IGBT MOD 650V 50A 208W ACEPACK1 | Tray | ACEPACK™ 1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |

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