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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT MOD 1200V 75A ACEPACK2TrayACEPACK™ 2Chassis Mount--40°C ~ 150°C (TJ)
STMicroelectronicsACEPACK 2 POWER MODULE, 3-LEVELTrayACEPACK™ 2Chassis Mount-175°C (TJ)
onsemiIGBT FIELD STOP 650V 68A TO-263BulkTO-263 (D2PAK)Surface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 650V 60A TO-263Tape & Reel (TR),Cut Tape (CT)TO-263 (D2PAK)Surface MountEcoSPARK®-55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 650V 68A TO-263Tape & Reel (TR),Cut Tape (CT)TO-263 (D2PAK)Surface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 650V 80A TO-263Tape & Reel (TR),Cut Tape (CT)TO-263 (D2PAK)Surface Mount--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 50A TO-247-4LTubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 50A TO-247-4LTubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
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