AFGB40T65SQDN

Single IGBTs Overview

The AFGB40T65SQDN is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing silicon technology. It features a D2PAK-3 surface-mount package designed for automated assembly. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25°C, with a pulsed current capacity of 80 A. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V and a gate-emitter leakage current of 400 nA. It operates within a temperature range of -55°C to +175°C, dissipating up to 238 W of power. The component holds AEC-Q101 qualification for automotive reliability.

Single IGBTs Feature Summary

• Automotive-grade reliability certified under the AEC-Q101 standard for rigorous environmental and operational stress testing.
• Surface-mount D2PAK-3 packaging facilitates efficient PCB layout and integration into automated manufacturing processes.
• High thermal performance capability allowing operation up to a maximum junction temperature of 175°C.

Single IGBTs Applications

• Automotive power electronics systems requiring AEC-Q101 qualified components.
• DC-DC converter circuits in electric vehicle charging infrastructure.
• Motor control applications in automotive traction and auxiliary systems.

Single IGBTs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct configuration. Confirm RoHS and REACH compliance status through the supplier's technical data sheets prior to procurement. Ensure storage conditions align with moisture sensitivity level requirements for surface-mount devices to prevent package damage during soldering.

Single IGBTs Selection Notes

Select this component when a surface-mount IGBT with automotive certification is required. Compare the 650V rating and 40A continuous current against circuit load requirements. Evaluate the D2PAK-3 thermal resistance characteristics against available heatsinking solutions. Verify that the 1.6V saturation voltage meets efficiency targets for the specific switching frequency and duty cycle of the application.

Single IGBTs Part Context

This part belongs to onsemi's FS4 IGBT series, which utilizes Field Stop technology to optimize switching losses and conduction characteristics. The series is engineered for high-efficiency power conversion in demanding environments. The SQDN suffix indicates specific packaging and tape-and-reel configuration for high-volume surface-mount production lines.

Single IGBTs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same voltage, current, and thermal specifications. Verify pinout compatibility and package dimensions if substituting with different manufacturers' equivalents.