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AFGB40T65RQDN is listed in the Single IGBTs range at ChipApex. The manufacturer field lists onsemi. Its product description is IGBT FIELD STOP 650V 68A TO-263. Review the specifications below when checking this part for your BOM.
Single IGBTs specifications for AFGB40T65RQDN
- Description：IGBT FIELD STOP 650V 68A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：68 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.82V @ 15V, 40A
- Power - Max：339.37 W
- Switching Energy：470µJ (on), 420µJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：21ns/77ns
- Test Condition：400V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：52 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
Single IGBTs datasheet and documents for AFGB40T65RQDN
Single IGBTs Overview
The AFGB40T65RQDN is a single IGBT in a D2PAK-3 (TO-263) package, rated for 650 V collector-emitter voltage and 40 A continuous collector current at 100°C case temperature. It utilizes FS4 field-stop technology with a typical saturation voltage of 1.55 V at 40 A and 25°C. The device supports a maximum junction temperature of 175°C and features short-circuit withstand capability of 5 µs. Thermal resistance from junction to case is typically 0.34 °C/W.
Single IGBTs Feature Summary
- FS4 field-stop IGBT technology providing low conduction and switching losses
- Positive temperature coefficient enabling easy parallel operation
- Short circuit rated for robust fault protection
- 100% tested for inductive load switching capability
Single IGBTs Applications
- E-compressor for HEV/EV
- PTC Heater for HEV/EV
Single IGBTs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets all automotive qualification requirements relevant to the target application environment before integration into the design.
Single IGBTs Selection Notes
Select this component for high-efficiency automotive power conversion where low saturation voltage and fast switching are critical. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and operating temperature range up to 175°C.
Single IGBTs Part Context
This part belongs to onsemi's FS4 IGBT series designed specifically for automotive applications. It complements other variants in the lineup by offering a surface-mount D2PAK configuration suitable for compact power modules and inverters.
Single IGBTs Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering cross-references.
Explore related parts through IGBTs, Transistors, Discrete Semiconductor Products, all product categories.
