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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 6MS30017E43W34404NOSA1 $29,963.01 | Infineon Technologies | IGBT MODULE 1700V 4280A | Tray | Module | Chassis Mount | ModSTACK™ HD | -25°C ~ 55°C |
![]() 6MS30017E43W40372NOSA1 $28,954.76 | Infineon Technologies | IGBT MODULE 1700V 1800A | Tray | Module | Chassis Mount | ModSTACK™ HD | -25°C ~ 55°C |
![]() 6PS03012E33G34160NOSA1 $3,764.43 | Infineon Technologies | IGBT MODULE 300V 234A 2100W | Bulk | Module | Chassis Mount | PrimeSTACK™ | -25°C ~ 55°C |
| Infineon Technologies | MODULE IGBT | Bulk | - | - | PrimeSTACK™ | -40°C ~ 85°C | |
![]() 6PS18012E4FG38393NWSA1 $11,297.99 | Infineon Technologies | IGBT MODULE 1200V STACK A-PSF-1 | Tray | Module | Chassis Mount | PrimeSTACK™ | 150°C (TJ) |
| Microsemi Corporation | TRANSISTOR | Bulk | - | - | * | - | |
![]() 92-0065 $2.64 | Infineon Technologies | IGBT 600V 60A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 92-0235 $1.70 | Infineon Technologies | IGBT 430V 20A TO-220AB | Tube | TO-220AB | Through Hole | - | -40°C ~ 175°C (TJ) |

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