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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Littelfuse Inc. | IGBT N-CH 20A 350V D2PAK | Tape & Reel (TR) | - | - | * | - | |
| Littelfuse Inc. | IGBT N-CH 20A 350V D2PAK | Tape & Reel (TR) | - | - | * | - | |
| Littelfuse Inc. | IGBT N-CH 20A D2PAK | Tape & Reel (TR) | - | - | * | - | |
| Littelfuse Inc. | IGBT N-CH 20A D2PAK | Tube | - | - | * | - |

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