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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT MODULE - PHASELEG SIMBUS F-Box----
IXYSIGBT MODULE - SIXPACK E2-PACK-PFBoxE2Chassis Mount--
IXYSIGBT MODULE 1200V 165A 640W E3BoxE3Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 1200V 125A 640W E3BoxE3Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 600V 72A 225W E2BoxE2Chassis Mount--40°C ~ 150°C (TJ)
IXYSIGBT MODULE 1200V 90A 350W E2BoxE2Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 1200V 65A 350W E2BoxE2Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 600V 90A 280W E2BoxE2Chassis Mount--40°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added