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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 600V 175A 24-SMPDTube24-SMPDSurface MountGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 650V 450A 24-SMPDTube24-SMPDSurface MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 92A 24-SMPDTube24-SMPDSurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 78A 24-SMPDTube24-SMPDSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT F BRIDGE 3000V 34A 24SMPDTube24-SMPDSurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT TRANS 3000V 38ATube24-SMPDSurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT F BRIDGE 2500V 23A 24SMPDTube24-SMPDSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyPM-IGBT-TFS-SP3FTubeSP3FChassis MountMSC-
Add ComparisonUp to 4 can be added