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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 MUBW50-06A7 $49.01 | IXYS | IGBT MODULE 600V 75A 250W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW50-12A8 $107.42 | IXYS | IGBT MODULE 1200V 85A 350W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 1200V 90A 350W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 80A 270W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
MUBW50-17T8 $120.75 | IXYS | IGBT MODULE 1700V 74A 290W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 600V 7A 38W E1 | Box | E1 | Chassis Mount | - | 150°C (TJ) | |
| IXYS | IGBT MODULE 600V 100A 320W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
MUBW75-12T8 $116.88 | IXYS | IGBT MODULE 1200V 110A 355W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
