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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 MUBW75-17T8 $153.36 | IXYS | IGBT MODULE 1700V 113A 450W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 600V 130A 410W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
MWI100-12A8 $159.77 | IXYS | IGBT MODULE 1200V 160A 640W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MWI100-12A8T $112.41 | IXYS | IGBT MODULE 1200V 160A 640W E3 | Tube | E3 | Chassis Mount | - | - |
| IXYS | IGBT MODULE 1200V 165A 640W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
| IXYS | IGBT MODULE 1200V 145A 480W E3 | Box | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) | |
MWI15-12A7 $55.28 | IXYS | IGBT MODULE 1200V 30A 140W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 600V 170A 515W E3 | Bulk | E3 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
