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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 MUBW30-12A6K $36.11 | IXYS | IGBT MODULE 1200V 30A 130W E1 | Box | E1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW30-12E6K $28.49 | IXYS | IGBT MODULE 1200V 30A 130W E1 | Box | E1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW35-06A6 $44.40 | IXYS | IGBT MODULE 600V 38A 104W E1 | Box | E1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW35-06A6K $26.79 | IXYS | IGBT MODULE 600V 42A 130W E1 | Box | E1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW35-12A7 $67.06 | IXYS | IGBT MODULE 1200V 50A 225W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
MUBW35-12E7 $44.63 | IXYS | IGBT MODULE 1200V 52A 225W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| IXYS | IGBT MODULE 1200V 62A 220W E2 | Box | E2 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT MODULE 1200V 43A 160W E1 | Box | E1 | Chassis Mount | - | -40°C ~ 125°C (TJ) |
