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1N1190R is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STD REV 600V 35A DO203AB. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N1190R is a standard recovery rectifier diode designed for high-power applications. It features a maximum DC reverse voltage (Vr) of 600 V and an average rectified current (Io) of 35 A. The device utilizes a DO-203AB (DO-5) leaded package with stud mounting capabilities. Key electrical characteristics include a forward voltage (Vf) of 1.4 V at 110 A and a reverse leakage current of 10 µA at 600 V. It operates within a junction temperature range of -65°C to 175°C and exhibits a standard recovery speed greater than 500 ns.
Verify the specific suffix requirements against the official datasheet, as military-grade variants may differ from commercial equivalents. Confirm RoHS compliance status, as this component is typically non-compliant. Ensure the ordering part number matches the exact package and qualification level required for the target application environment.
Select this component when a 600 V, 35 A rectifier with stud mounting is required. Consider the 1.4 V forward voltage drop for thermal management calculations. Verify that the system's peak inverse voltage does not exceed the 600 V rating under all operating conditions. Ensure the mounting hardware supports the DO-5 package dimensions.
This component belongs to the 1N1190 series of silicon rectifiers manufactured by Microchip Technology. It is part of a broader family of high-current diodes designed for rugged environments. The DO-203AB package provides a reliable interface for high-power dissipation scenarios common in industrial and aerospace electronics.
Consult the official datasheet for cross-reference information. Verify pinout compatibility and thermal resistance values before substituting with other 600 V, 35 A stud-mount diodes.
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