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1N3993E3 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 3.9V 10W DO4. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N3993E3 is a commercial-grade 10W Zener diode with a nominal voltage of 3.9V. It operates within a junction temperature range of -65°C to +175°C and features a DO-213AA (DO-4) package. The device exhibits a maximum dynamic impedance of 2.0 Ohms at the test current of 640mA and a maximum reverse current of 100µA. It is RoHS compliant and qualified per MIL-PRF-19500/124 standards.
Verify that the ordering suffix 'e3' confirms RoHS compliance for the commercial grade variant. Ensure the specific polarity configuration matches the application requirements, as standard polarity for this series indicates cathode to stud. Confirm that the required voltage tolerance aligns with the standard +/- 5% specification provided in the datasheet.
Select this component when a hermetically sealed, high-power Zener diode is required for rugged applications. The DO-4 package allows for direct mounting via stud. Consider the thermal resistance and power derating curves if operating near the maximum junction temperature limits. Verify radiation hardness requirements against Microsemi MicroNote 050 specifications.
This part belongs to the JEDEC registered 1N3993A through 1N3998A series of 10W Zener diodes. These devices offer voltage regulation values between 3.9V and 200V. The series is available in JAN, JANTX, and JANTXV military qualification grades on most voltage values, providing options for varying levels of reliability and performance.
Consult the manufacturer for surface mount equivalents. Other parts in the 1N3993A-1N3998A series may serve as alternatives if voltage ratings differ. Verify compatibility with existing mounting hardware and thermal management solutions before substitution.
The standard polarity for the 1N3993A through 1N3998A series is cathode to stud.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.
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