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1N4150 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 50V 200MA DO204AH. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N4150 is a hermetically sealed silicon switching diode housed in a DO-35 glass package. It supports an operating temperature range of -65°C to +175°C and handles a maximum surge current of 4.0A for 1µs pulses. Key electrical parameters include a reverse voltage of 50V, forward current up to 200mA, and a maximum power dissipation of 500mW. The device features a typical reverse recovery time of 4ns and capacitance of 2.5pF at 0V bias.
Verify the specific ordering suffix (e.g., JAN, JANTX, JANTXV) against MIL-PRF-19500/231 requirements to ensure compliance with intended military or commercial specifications. Confirm lead finish and marking details match system documentation. Cross-reference datasheet thermal resistance values with actual PCB mounting conditions to maintain safe junction temperatures during operation.
Select this component for designs requiring high-reliability hermetic sealing and wide temperature tolerance. Ensure the circuit operates within the 200mA continuous current limit and respects the 2mA/°C derating factor above 75°C ambient. Verify that the 50V reverse voltage rating exceeds peak circuit voltages to prevent breakdown.
This part belongs to the 1N4150 series of small-signal switching diodes manufactured by Microchip Technology. It is designed for robust performance in harsh environments due to its hermetic glass seal. The component serves as a standard replacement for legacy military-grade switching diodes in established electronic systems.
The device can withstand a sine wave surge current of 4.0A for 1µs duration.
At 200mA forward current, the forward voltage ranges from 0.87V to 1.00V.
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