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1N4447/TR
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Product Detailed Parameters
- Description：DIODE STANDARD 75V 200MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 20 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：25 nA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N4447/TR is a JEDEC registered small-signal switching diode designed for high-speed applications. It features hermetically sealed glass construction with internal metallurgical bonding in a DO-35 package. The device operates within a junction temperature range of -65°C to +150°C and supports an average rectified forward current of 200 mA. Key electrical specifications include a maximum working peak reverse voltage of 75 V, a maximum forward voltage of 1.0 V at 20 mA, and a reverse recovery time of 4 ns.
Feature Summary
- Hermetically sealed glass construction with metallurgically bonded internal structure
- Very fast switching speeds with minimal reverse recovery times
- Low capacitance design suitable for high-frequency data lines
- Available with screening in reference to MIL-PRF-19500
Applications
- High frequency data lines
- RS-232 & RS-422 interface networks
- Ethernet 10 Base T
- Switching core drivers
- Computers and peripheral equipment
Procurement Notes
Verify the specific suffix requirements against the manufacturer's nomenclature guide to ensure correct RoHS compliance and reliability level selection. Confirm that the reel packaging aligns with standard EIA-296 specifications if tape and reel delivery is required. Cross-reference the part number with the latest datasheet revisions to validate current manufacturing status and availability constraints.
Selection Notes
Select this component for designs requiring fast switching capabilities and low capacitance in a through-hole format. Ensure the circuit operating voltage remains below the 75 V peak reverse rating. Consider the thermal limits when designing for environments approaching the maximum junction temperature. Verify lead plating options if specific solderability standards are mandated by the assembly process.
Part Context
This component belongs to the popular 1N4446–1N4449 series of JEDEC registered switching diodes. These devices share similar electrical characteristics and physical dimensions, differing primarily in specific leakage or voltage parameters. They are widely used in decoding, encoding, and general-purpose signal switching applications across industrial and consumer electronics.
Replacement Considerations
Direct substitutes include the 1N4149-1, 1N4151-1, 1N4154-1, 1N4446-1, 1N4448-1, and 1N4449-1 from the same series. Verify pinout compatibility and ensure the replacement meets the specific reverse voltage and current requirements of the original design.
FAQ
What is the maximum working peak reverse voltage for the 1N4447-1?
The maximum working peak reverse voltage (VRWM) for the 1N4447-1 is 75 V.
Does the 1N4447-1 feature hermetic sealing?
Yes, the 1N4447-1 utilizes hermetically sealed glass construction with internal metallurgical bonding.
What is the reverse recovery time specification?
The reverse recovery time (trr) is specified as 4 ns at a test current of 10 mA.
