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1N4448
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Product Detailed Parameters
- Description：DIODE STANDARD 75V 200MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：25 nA @ 20 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N4448 is a silicon epitaxial planar switching diode housed in the DO-35 (SOD27) axial leaded glass package. It features a maximum DC reverse voltage of 75 V and an average forward rectified current of 150 mA. Key electrical parameters include a maximum reverse leakage current of 5 µA at 75 V, a typical forward voltage of 720 mV at 5 mA, and a fast reverse recovery time of 8 ns. The device operates within a junction temperature range up to 175°C and exhibits a capacitance of 4 pF at 0 V and 1 MHz.
Feature Summary
- High-speed switching capability with rapid reverse recovery characteristics suitable for high-frequency applications
- Hermetically sealed leaded glass construction ensuring environmental stability and reliability
- Low forward voltage drop optimized for efficient signal processing and logic interfacing
Applications
- High-speed digital logic circuits and signal gating
- Clamping and protection in sensitive electronic inputs
- General-purpose rectification in low-power switching applications
Procurement Notes
Verify the specific manufacturer designation on the component marking, as the 1N4448 part number is utilized by multiple semiconductor vendors including Vishay, onsemi, and Fairchild. Confirm that the received unit matches the required package style and electrical specifications defined in the official datasheet before integration into production designs.
Selection Notes
Select this component when a standard small-signal switching diode with axial leads is required for through-hole mounting. Ensure the design accounts for the 150 mA current limit and 75 V reverse voltage rating. Verify compatibility with existing PCB footprints designed for the DO-35 package geometry.
Part Context
The 1N4448 belongs to the family of general-purpose silicon switching diodes, closely related to the widely used 1N4148. While sharing similar functional roles, variations exist between manufacturers regarding exact reverse recovery times and leakage currents. This specific variant represents the standard axial-leaded version commonly employed in legacy and modern through-hole circuit designs.
Replacement Considerations
- 1N4148
- 1N914
FAQ
What is the maximum operating junction temperature for the 1N4448?
The maximum operating junction temperature is 175°C.
Does the 1N4448 use a surface mount or through-hole package?
The 1N4448 utilizes a through-hole axial leaded glass package, specifically DO-35 or SOD27.
