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Product Detailed Parameters
- Description:DIODE STANDARD 85V 200MA DO204AH
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR)
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):85 V
- Current - Average Rectified (Io):200mA
- Voltage - Forward (Vf) (Max) @ If:1.1 V @ 400 mA
- Speed:Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):10 ns
- Current - Reverse Leakage @ Vr:100 µA @ 50 V
- Capacitance @ Vr, F:-
- Mounting Type:Through Hole
- Package / Case:DO-204AH, DO-35, Axial
- Supplier Device Package:DO-204AH (DO-35)
- Operating Temperature - Junction:-65°C ~ 150°C
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Overview
The Microchip Technology 1N4608/TR is a silicon switching diode housed in a DO-35 glass package. It features an 85 V peak inverse voltage and a 200 mA average rectified current rating. The device exhibits a maximum forward voltage drop of 1.10 V at 400 mA and a reverse leakage current of 100 µA at 50 V. Its reverse recovery time is specified at 10 ns, supporting fast switching applications within an operating temperature range of -65°C to +150°C.
Feature Summary
- Utilizes metallurgically bonded construction with BKC's Sigma Bond plating for reliable solderability
- Encapsulated in a DO-35 glass package designed for general-purpose signal or computer diode applications
Applications
- General purpose circuits requiring controlled forward characteristics
- Applications demanding fast switching speed performance
Procurement Notes
Verify the specific manufacturer origin, as datasheet content references BKC specifications while the model is attributed to Microchip Technology. Confirm that the TR suffix denotes tape and reel packaging compatible with automated assembly processes. Ensure compliance with RoHS directives and check for any military-grade variants if environmental ruggedness is required for the target deployment.
Selection Notes
Select this component when a robust silicon switching diode with a 10 ns reverse recovery time is necessary. The DO-35 through-hole package suits manual or standard automated insertion. Evaluate the 85 V PIV and 200 mA average current limits against circuit load requirements to ensure adequate headroom during peak surge events up to 1.0 Amp.
Part Context
This part belongs to the family of small-signal switching diodes manufactured by Microchip Technology. It shares the DO-35 axial leaded form factor common to legacy semiconductor designs. The device serves as a fundamental discrete component for rectification and signal processing tasks in electronic assemblies.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in reverse recovery speed or thermal dissipation capabilities.
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