1N4679 TR PBFREE

Overview

The Central Semiconductor Corp 1N4679 TR PBFREE is a silicon Zener diode designed for low-level applications requiring extremely low operating current and leakage. It features a nominal Zener voltage of 2.0 V with a 5% tolerance, tested at 50 μA. The device supports a maximum power dissipation of 500 mW and operates within a junction temperature range of -65°C to +200°C. Packaged in the DO-35 axial leaded case, it offers a maximum reverse leakage current of 5.0 μA and a maximum regulator current of 110.0 mA.

Feature Summary

• Designed for applications requiring extremely low operating current and low leakage characteristics
• Provides stable voltage regulation with a tight 5% tolerance specification
• Capable of high thermal operation with a junction temperature rating up to 200°C

Applications

• Low-level voltage reference circuits
• Precision voltage regulation in sensitive analog systems
• Protection against overvoltage transients in low-power electronics

Procurement Notes

Verify that the ordering suffix PBFREE confirms lead-free plating compliance as specified by the manufacturer. Ensure the procurement matches the standard DO-35 axial package configuration. Confirm the specific part number corresponds to the 2.0 V nominal voltage variant within the 1N4678 series. Cross-reference marking codes if visual inspection is required for quality assurance.

Selection Notes

Select this component when circuit design demands minimal quiescent current consumption alongside precise low-voltage clamping. The 500 mW power rating allows for moderate current handling in compact axial packages. Consider the wide operating temperature range for environments subject to significant thermal fluctuations. Verify that the 5% tolerance aligns with the system's voltage accuracy requirements.

Part Context

This component belongs to the 1N4678 through 1N4717 series of silicon Zener diodes manufactured by Central Semiconductor Corp. The series covers a voltage range from 1.8 V to 43 V, all sharing common electrical characteristics such as low leakage and 5% tolerance. The 1N4679 specifically addresses the lower end of this spectrum, providing a 2.0 V reference point.

Replacement Considerations

Direct parameter-equivalent substitutes include the Vishay 1N4679 and other generic 1N4679 variants. When replacing, ensure the alternative device maintains the 500 mW power dissipation rating and DO-35 package footprint. Verify that the replacement also meets the 5% voltage tolerance and low leakage specifications required by the original design.