1N4696D

Overview

The Microchip Technology 1N4696D is a single silicon Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 9.1 V with a tight tolerance of ±1%. The device operates in the through-hole DO-7 (DO-204AA) axial package and dissipates up to 500 mW of power. Key electrical characteristics include a maximum reverse leakage current of 1 µA at 6.9 V and a forward voltage of 1.1 V at 200 mA. It supports a wide operating temperature range from -65°C to +175°C, ensuring reliability in demanding environments.

Feature Summary

• Provides precise voltage regulation with a 9.1 V nominal Zener voltage and ±1% tolerance.
• Capable of handling high thermal loads with a 500 mW power dissipation rating.
• Engineered for extreme environmental stability with an extended operating temperature range.
• Constructed with hermetically sealed glass encapsulation for enhanced durability.

Applications

• Precision voltage reference circuits
• Overvoltage protection stages
• Temperature-compensated bias networks

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm exact tolerance and packaging variations. Ensure the procurement channel provides valid traceability records for aerospace or military-grade requirements. Cross-reference the manufacturer part number with the latest datasheet revision to confirm compliance with RoHS directives and material declarations before finalizing orders.

Selection Notes

Select this component when circuit design requires high voltage accuracy within a narrow tolerance band. The low leakage current specification makes it suitable for high-impedance sensing applications. Consider the axial leaded package geometry for standard PCB mounting or wire-wrap assemblies where robust mechanical connections are necessary for long-term operational integrity.

Part Context

This component belongs to the 1N4696 series of Zener diodes manufactured by Microchip Technology. It serves as a specialized voltage regulator within the broader discrete semiconductor portfolio. The device is engineered to meet stringent performance standards for critical electronic systems requiring stable reference voltages under varying thermal conditions.

Replacement Considerations

Compatible substitutes include the MX1N4696DUR-1TR from Microsemi, which offers identical electrical specifications in a hermetic MELF package. Verify pinout compatibility and thermal management requirements when transitioning between axial and surface-mount form factors.

FAQ

What is the maximum reverse leakage current specified for the 1N4696D?

The maximum reverse leakage current is specified as 1 µA at a test voltage of 6.9 V.

Does the 1N4696D support high-temperature operation?

Yes, the device is rated for operation up to a maximum junction temperature of +175°C.