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1N5249BUR-1 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 19V 500MW DO213AA. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N5249BUR-1 is a surface mount Zener voltage regulator with a nominal breakdown voltage of 19 V and a maximum power dissipation of 0.5 W. It utilizes a hermetically sealed DO-213AA (MELF) package featuring an internal metallurgical bond. The device provides a 5% voltage tolerance, a maximum reverse leakage current of 0.1 µA at 14 V, and a dynamic impedance of 23 Ω at the test current of 6.6 mA. Operating temperatures range from -65°C to +175°C.
Verify component authenticity through authorized channels due to historical manufacturing transitions between Microsemi and Microchip. Confirm RoHS compliance status as commercial versions are available while military screening options exist. Ensure proper handling procedures are followed during assembly despite the robust metallurgical bond construction.
Select this component when a ruggedized surface mount solution is required for space or high-reliability environments. The DO-213AA package offers a direct footprint replacement for traditional axial leads. Verify that the 19 V breakdown voltage aligns with circuit requirements and that the 0.5 W power rating accommodates thermal derating curves under expected ambient conditions.
This part belongs to the 1N5221BUR-1 through 1N5281BUR-1 series of 0.5 W Zener diodes originally manufactured by Microsemi Corporation. Following corporate acquisitions, these products are now managed within the Microchip Technology portfolio. The series maintains specific MIL-PRF-19500 screening availability alongside standard commercial grade offerings.
Direct parameter-equivalent replacements include the 1N5249B in the DO-35 axial leaded package. Surface mount equivalents may require verification of pinout compatibility and thermal resistance characteristics against the original design constraints.
The maximum reverse leakage current is 0.1 µA measured at a reverse voltage of 14 V.
No, the device is non-sensitive to ESD according to MIL-STD-750 method 1020.
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