2ED2778S01GXTMA1

Gate Driver Overview

The Infineon Technologies 2ED2778S01GXTMA1 is a 160 V half-bridge gate driver utilizing Silicon On Insulator (SOI) technology. It features an integrated bootstrap diode and supports N-channel MOSFETs with a supply voltage range of 5 V to 140 V. The device provides a source output current of 4 A and a sink output current of 8 A. Propagation delays are specified at 50 ns for both turn-on and turn-off operations. Input supply ranges from 7 V to 18 V, with UVLO thresholds set at 8.2 V (On) and 7.7 V (Off).

Gate Driver Feature Summary

• Integrates a bootstrap diode to simplify high-side drive circuit design.
• Utilizes SOI technology for functional level shift isolation.
• Provides asymmetric drive strength with higher sink capability.

Gate Driver Applications

• Industrial motor drives
• Power supply inverters
• High-voltage switching applications

Gate Driver Procurement Notes

Verify the specific ordering suffix XTMA1 against the manufacturer's latest datasheet to confirm package type and tape-and-reel specifications. Confirm industrial qualification status and RoHS compliance requirements prior to procurement. Ensure the component meets the required operating temperature range for the target application environment.

Gate Driver Selection Notes

Select this component when a 160 V rating and integrated bootstrap diode are required for half-bridge topologies. The asymmetric current drive suits applications needing fast turn-off. Verify that the control logic levels are compatible with the 7 V to 18 V input supply range. Consider the PG-VSON-10-5 package constraints for thermal management and PCB layout.

Gate Driver Part Context

This part belongs to the 2ED27xxS01G series of half-bridge gate drivers from Infineon. These devices are designed for robust performance in industrial environments. The SOI technology offers enhanced reliability compared to traditional junction-isolated alternatives. The series supports various voltage classes within the 160 V specification.

Gate Driver Replacement Considerations

Check for direct pin-to-pin replacements within the same family, such as other variants in the 2ED27xxS01G series. Verify if updated revisions or alternative packages are available from the manufacturer. Cross-reference electrical parameters like propagation delay and UVLO thresholds with potential substitutes.

Gate Driver FAQ

What isolation technology does the 2ED2778S01G use?

It uses Silicon On Insulator (SOI) technology for functional level shift isolation.

Is the bootstrap diode internal or external?

The bootstrap diode is integrated internally within the device.