2N2920U

Bipolar Transistor Arrays Overview

The Microchip Technology 2N2920U is an NPN silicon dual transistor qualified per MIL-PRF-19500/355. It features a collector-emitter voltage of 60 Vdc and a continuous collector current of 30 mAdc. Total power dissipation reaches 350 mW at +25°C ambient temperature. The device operates within a junction temperature range of -65 to +200 °C. DC current gain (hFE) ranges from 175 to 1000 at IC = 1.0mAdc, VCE = 5.0Vdc. Collector-emitter saturation voltage is 0.3 Vdc at IC = 1.0mAdc, IB = 100μAdc. The component utilizes a TO-78 U surface mount package.

Bipolar Transistor Arrays Feature Summary

• Qualified for military standards under MIL-PRF-19500/355
• Dual NPN configuration in a single surface-mount package
• Extended operating junction temperature up to +200 °C

Bipolar Transistor Arrays Applications

• Military-grade signal amplification circuits
• High-reliability switching applications
• Aerospace electronic systems requiring ruggedized components

Bipolar Transistor Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact qualification level and packaging format. Ensure procurement channels source directly from authorized distributors to guarantee authenticity. Confirm that the delivered units match the MIL-PRF-19500/355 specification requirements for your intended deployment environment.

Bipolar Transistor Arrays Selection Notes

Select this component when a dual NPN transistor with high reliability and wide temperature tolerance is required. Compare hFE ranges and saturation voltages against circuit requirements. Consider the TO-78 U surface mount footprint during PCB layout. Verify thermal derating calculations for total power dissipation if both sections are active simultaneously.

Bipolar Transistor Arrays Part Context

The 2N2920U belongs to the 2N2919/2N2920 family of NPN silicon dual transistors. This series includes various qualification levels such as JAN, JANTX, JANTV, and JANS. The 'U' suffix specifically denotes the surface mount variation of the standard TO-78 metal can package, providing a compact form factor for modern assembly processes while maintaining military performance.

Bipolar Transistor Arrays Replacement Considerations

Direct replacements include other 2N2920 variants like 2N2920L or 2N2920JAN, provided the package type matches the design constraints. Cross-reference electrical parameters such as VCEO and hFE to ensure compatibility. Verify that any substitute meets the same MIL-PRF-19500/355 qualification if military grade is mandatory.