2N3583

Single Bipolar Transistors Overview

The Microchip Technology 2N3583 is a high-voltage NPN silicon power transistor housed in a hermetically sealed TO-66 metal case. It features an operating collector-emitter voltage of 175 V and a continuous collector current rating of 1 A. The device dissipates 35 W of power and operates within a junction temperature range of -65°C to 200°C. Its transition frequency is specified at 10 MHz, supporting reliable performance in demanding industrial and military environments.

Single Bipolar Transistors Feature Summary

• Hermetically sealed TO-66 metal package ensures maximum reliability and long life
• High thermal capability permits operation in extreme ambient temperatures up to 200°C
• Designed for robust performance in critical industrial and military applications

Single Bipolar Transistors Applications

• Industrial control systems requiring high voltage isolation
• Military equipment demanding radiation-hardened or high-reliability components
• High-voltage switching circuits in aerospace avionics

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking on the TO-66 case to confirm Microchip Technology origin. Ensure the part number suffix matches the specific electrical bin requirements. Check for lead integrity and absence of corrosion due to the hermetic seal. Confirm RoHS compliance status if required by your assembly process. Validate that the received component matches the datasheet specifications for voltage and current ratings before integration.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and thermal stability are critical. The TO-66 package offers superior heat dissipation compared to plastic alternatives. Consider the 175 V rating for circuits exceeding standard low-voltage limits. Evaluate the 1 A current capacity against load requirements. Ensure the system design accommodates the physical size and mounting constraints of the metal can package.

Single Bipolar Transistors Part Context

The 2N3583 belongs to a family of high-voltage NPN power transistors designed for rugged environments. It shares similar packaging with other MIL-spec devices but offers specific electrical characteristics tailored for high-reliability applications. The TO-66 form factor provides mechanical strength and thermal conductivity essential for defense and aerospace sectors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N3584 and 2N3585 from the same series. Verify pinout compatibility and absolute maximum ratings before substitution. Cross-reference with equivalent parts from other manufacturers ensuring identical voltage and current capabilities.