Single Bipolar Transistors 2N3637UB product image

2N3637UB

$12.05
  • Description:TRANS PNP 175V 1A UB
  • Series:-

SKU:a269b9ba3480 Category: Brand:

  
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2N3637UB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3637UB

  • Description:TRANS PNP 175V 1A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):175 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3637UB

2N3637UB

Single Bipolar Transistors Overview

The JAN2N3637UB/TR is a PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a single configuration in an LCC-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 175 V, a maximum collector-base voltage of 175 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a power dissipation capacity of 1.5 W. It operates within a temperature range of -65°C to +200°C. DC current gain ranges from a minimum of 55 at low currents to a maximum of 300 under specific test conditions.

Single Bipolar Transistors Feature Summary

  • Qualified for MIL-PRF-19500/357 standards ensuring reliability in harsh environments
  • High thermal stability supporting operation up to 200°C
  • Silicon construction optimized for low-power switching applications

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • Harsh environment industrial control circuits
  • High-reliability analog signal processing

Single Bipolar Transistors Procurement Notes

Verify the JAN prefix indicates compliance with MIL-PRF-19500/357 specifications. Confirm the /TR suffix denotes tape and reel packaging if required for automated assembly. Ensure the manufacturer is Microchip Technology to guarantee authenticity. Check for recent Product Change Notifications regarding material or process updates.

Single Bipolar Transistors Selection Notes

Select this component when high voltage tolerance and extended temperature capability are required. The PNP polarity suits complementary circuit designs needing negative rail switching. Verify that the LCC-3 package fits the available board space. Compare current gain requirements against the specified hFE range to ensure adequate drive margins.

Single Bipolar Transistors Part Context

This part belongs to the 2N3634/3635/3636/3637 series of low-power PNP transistors. These devices are designed for general-purpose amplification and switching. The JAN variant specifically targets defense and aerospace sectors requiring strict quality controls. Other series members offer similar characteristics with varying voltage or current ratings.

Single Bipolar Transistors Replacement Considerations

  • JAN2N3637L

Single Bipolar Transistors FAQ

What is the maximum operating temperature?

The maximum operating temperature is +200°C.

Is this component qualified for military standards?

Yes, it is qualified to MIL-PRF-19500/357.

What is the package type?

It uses an LCC-3 surface-mount package.

2N3637UB2N3637UB
$12.05
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