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2N3637UB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A UB. Review the specifications below when checking this part for your BOM.
The JAN2N3637UB/TR is a PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a single configuration in an LCC-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 175 V, a maximum collector-base voltage of 175 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a power dissipation capacity of 1.5 W. It operates within a temperature range of -65°C to +200°C. DC current gain ranges from a minimum of 55 at low currents to a maximum of 300 under specific test conditions.
Verify the JAN prefix indicates compliance with MIL-PRF-19500/357 specifications. Confirm the /TR suffix denotes tape and reel packaging if required for automated assembly. Ensure the manufacturer is Microchip Technology to guarantee authenticity. Check for recent Product Change Notifications regarding material or process updates.
Select this component when high voltage tolerance and extended temperature capability are required. The PNP polarity suits complementary circuit designs needing negative rail switching. Verify that the LCC-3 package fits the available board space. Compare current gain requirements against the specified hFE range to ensure adequate drive margins.
This part belongs to the 2N3634/3635/3636/3637 series of low-power PNP transistors. These devices are designed for general-purpose amplification and switching. The JAN variant specifically targets defense and aerospace sectors requiring strict quality controls. Other series members offer similar characteristics with varying voltage or current ratings.
The maximum operating temperature is +200°C.
Yes, it is qualified to MIL-PRF-19500/357.
It uses an LCC-3 surface-mount package.
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