2N4123 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor 2N4123 PBFREE is an NPN silicon small signal transistor manufactured via the epitaxial planar process. It features a collector-base voltage of 40 V, a collector-emitter voltage of 30 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 200 mA with a power dissipation rating of 625 mW at ambient temperature and 1.5 W at case temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 50 to 150 at 2.0 mA, a transition frequency (fT) of 250 MHz, and a collector-base capacitance of 4.0 pF. Operating junction temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar silicon construction designed for general-purpose amplifier and switching applications
• Complementary pairing available within the 2N4123 series alongside PNP variants
• Through-hole TO-92 package configuration with standard lead assignments

Single Bipolar Transistors Applications

• General purpose amplification circuits
• Electronic switching applications
• Complementary circuit designs requiring matched NPN/PNP pairs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating compliance. Requesting tin/lead plated devices requires adding the 'TIN/LEAD' suffix to the part number. Confirm RoHS status and environmental compliance documentation directly with the manufacturer or authorized distributors prior to finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for low-power general-purpose tasks requiring moderate voltage handling and high-frequency response. The 2N4123 serves as the NPN counterpart in the complementary series, allowing designers to pair it with the 2N4125 PNP variant for balanced push-pull or differential stages. Ensure thermal management aligns with the specified 625 mW ambient dissipation limit.

Single Bipolar Transistors Part Context

This device belongs to the Central Semiconductor 2N4123 series, which includes complementary NPN and PNP transistors. The series is engineered using epitaxial planar technology to provide reliable performance in discrete semiconductor applications. Central Semiconductor specializes in such niche and standard discrete devices, offering both through-hole and surface mount options across their portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2N4125 as the complementary PNP device within the same series. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the 2N4123?

The maximum collector-base voltage (VCBO) is 40 V.

How does the 2N4123 relate to other devices in its series?

It is an NPN transistor that forms a complementary pair with the 2N4125 PNP transistor within the 2N4123 series.

What packaging style is used for this component?

The component utilizes a TO-92 through-hole package with three leads assigned as Emitter, Base, and Collector.