2N4338-E3

Jfets Overview

The Vishay Siliconix 2N4338-E3 is an N-channel Junction Field-Effect Transistor (JFET) housed in a hermetically sealed TO-206AA (TO-18) metal can package. It features a Gate-Source Cutoff Voltage (VGS(off)) ranging from -0.3 V to -1 V and a minimum Gate-Source Breakdown Voltage of -50 V. The device exhibits a typical forward transconductance (gfs) of 0.6 mS and a maximum saturation drain current (IDSS) of 0.6 mA at 25°C. With an equivalent input noise voltage of 6 nV/√Hz, it supports low-voltage operation down to 1 V.

Jfets Feature Summary

• Hermetically sealed TO-206AA (TO-18) metal case suitable for military processing
• Low cutoff voltage design accommodates low-level power supplies
• Very low noise characteristics for high-sensitivity applications
• High input impedance with minimal leakage current

Jfets Applications

• High-gain, low-noise amplifiers
• Low-current, low-voltage battery-powered amplifiers
• Infrared detector amplifiers
• Ultrahigh input impedance pre-amplifiers

Jfets Procurement Notes

Verify the component matches the specific 2N4338 variant within the 2N4338-4341 series datasheet. Confirm the E3 suffix indicates lead-free composition as per Vishay standards. Ensure the TO-18 package pinout aligns with your circuit design. Cross-reference the document number 70240 for the most current electrical limits and thermal derating requirements before integration.

Jfets Selection Notes

Select this JFET when system constraints require operation from very low supply voltages, specifically down to 1 V. The tight VGS(off) range suits precision analog stages where predictable biasing is critical. Consider the TO-18 package if environmental sealing or radiation hardness is required, noting that plastic alternatives exist in the J/SST201 series for non-military use cases.

Jfets Part Context

This component belongs to a family of N-channel JFETs including the 2N4339, 2N4340, and 2N4341. These devices are engineered for sensitive amplifier stages at low to mid-frequencies. While sharing similar packaging and basic structural properties, each part number differs significantly in cutoff voltage and transconductance specifications to target distinct gain and impedance requirements.

Jfets Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided datasheet. Designers should consult application notes AN102 and AN106 for general guidance on JFET replacement strategies or refer to the J/SST201 series data sheet for similar products in alternative packages like TO-92 or SOT-23.